Silicon oxide for better computer memory: Use of porous silicon oxide reduces forming voltage, improves manufacturability

10 julio 2014

A breakthrough silicon oxide technology for high-density, next-generation computer memory is one step closer to mass production, thanks to a refinement that will allow manufacturers to fabricate devices at room temperature with conventional production methods.
http://feeds.sciencedaily.com/~r/sciencedaily/~3/4PrTLcJldU0/140710131018.htm