A new multi-bit ‘spin’ for magnetic random access memory storage

22 julio 2014

Interest in magnetic random access memory (MRAM) is escalating, thanks to demand for fast, low-cost, nonvolatile, low-consumption, secure memory devices. MRAM boasts all of these advantages as an emerging technology, but so far it hasn’t been able to match flash memory in terms of storage density. A research team reports an intriguing new multi-bit MRAM storage paradigm with the potential to rival flash memory.