{"id":13727,"date":"2014-12-08T12:46:54","date_gmt":"2014-12-08T12:46:54","guid":{"rendered":"https:\/\/www.clpu.es\/rss_externo\/finding-the-achilles-heel-of-gan-based-leds-in-harsh-radiation-environments\/"},"modified":"2014-12-08T12:46:54","modified_gmt":"2014-12-08T12:46:54","slug":"finding-the-achilles-heel-of-gan-based-leds-in-harsh-radiation-environments","status":"publish","type":"rss_externo","link":"https:\/\/www.clpu.es\/en\/rss_externo\/finding-the-achilles-heel-of-gan-based-leds-in-harsh-radiation-environments\/","title":{"rendered":"Finding the Achilles&#8217; heel of GaN-based LEDs in harsh radiation environments"},"content":{"rendered":"<p>Gallium nitride (GaN) based devices are attractive for harsh environment electronics because of their high chemical and the mechanical stability of GaN itself that has a higher atomic displacement &#8230;<br \/><a href='http:\/\/www.physnews.com\/nano-physics-news\/cluster1088338500\/' title='Finding the Achilles' heel of GaN-based LEDs in harsh radiation environments' target='_blank'>http:\/\/www.physnews.com\/nano-physics-news\/cluster1088338500\/<\/a><\/p>\n","protected":false},"author":2,"featured_media":0,"template":"","meta":{"_acf_changed":false,"inline_featured_image":false},"class_list":["post-13727","rss_externo","type-rss_externo","status-publish","hentry","entry"],"acf":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v28.6 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Finding the Achilles&#039; 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